So before starting transient testing I thought I do some more testing on the two
PMXB56EN N-mosfets. These will be added between VREF_VOUT (this is the internal net where the 1T45 are powered from) and VOUT (external pin on the header).
Here especially the resistance of these two mosfets could be an issue and should be checked.
We drive their gates from our auxiliary 9V (nominal) supply that is created with the charge pump. It could be that the 9V are not enough to properly open them: What matters is that the gate voltage is far enough above the source voltage, that is the voltage applied to VREF_VOUT. So if someone wanted to use 3.3V then we were 5.7V above source, which would be good enough. But if the nominal 9V aren’t 9 and someone wanted to use 5.5V then we could run into issues.
So better measure it:
5V Vusb gives 8.7V at the gate, 4.75V Vusb 8.3V at the gate, 4.5V Vusb just 7.9V. So properly powering the BP matters.
A normal use would be for example to input 250 mA @ 5V into VREF_VOUT and properly supply the BP with 5V Vusb. The gates then are 3.7V above source - this is less than what the specification of the fets define, so the resistance will be higher. They specify max 65 mOhms per fet at 4.5 gate/source. I measured 48.7 mV or 194 mOhms for both of them.
If you go up and want to input 400 mA @ 5.5V into VREF_VOUT I measured 208 mOhms. So not much of a difference in this direction.
When the host you power your BP from is supplying you less voltage then it goes up though: with 4.75V Vusb and 5.5V input I measured 237 mOhms. If your host just supplies 4.5V Vusb and you then want to use it goes up to 345 mOhms.
But all these vales still just mean you lose about 100 mV. When you supply the VOUT from the outside for example from a lab psu you probably can easily compensate that by just going a few mV up if it really matters.
When the power goes the other way and is supplied from the internal voltage regulator you obviously can’t go above Vusb and also have to live with the like 100 mV drop of the regulator. So your source voltage isn’t as high to start with and this helps getting the gate-difference higher.
If you set the voltage on VOUT to 3.3V there should be enough difference to the gate, more than 5V. But I still measured still 179 mOhms over the two fets. This is 89 mOhms per fet, so quite a bit more than the 65 mOhms per fet they claim in the datasheet. Now there are of course contact resistances on my pcb and measurement setup, but I wouldn’t expect these resistances to be so high. But I’m not in the mood to hunt these milliohms down, since I think they don’t matter much in this usecase.
I think these fets will work well for this case and the extra resistance is a price you have to pay for the extra protection.